L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

FEATURES ○ Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm

文件：94.23 Kbytes 页数：16 Pages

NEC

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Hetero Junction Field Effect transistor

FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz • 4 pins super mini mold package • Wg = 800 μ m

文件：236.4 Kbytes 页数：13 Pages

RENESAS

瑞萨

SMT-86

NEC

瑞萨

上传：深圳市胜彬电子有限公司

SOT89

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOP/DIP

TI

德州仪器

上传：深圳市勤思达科技有限公司