The Broadband RF TMOS짰 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode • Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55 (Typ.) • Facilitates manual gain control, ALC and modulati

文件：880.74 Kbytes 页数：18 Pages

MA-COM

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

文件：93.95 Kbytes 页数：6 Pages

Motorola

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TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55 (Typ) •

文件：493.99 Kbytes 页数：16 Pages

MACOM

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement-Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz performance Output power = 4.0 Watts Gain = 16 dB (Min) Efficiency = 55 (Typ) • Excel

文件：416.64 Kbytes 页数：9 Pages

MACOM

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

文件：122.14 Kbytes 页数：8 Pages

Motorola

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Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

POWE FIELD EFFECT TRANSISTOR

DESCRIPTION: The MRF160 is an Enhancement-Mode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz.

文件：167.23 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V Designed primarily for wideband large–signal output and driver from 30–500 MHz. N–Channel enhancement mode MOSFET • Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55 (typ.) • E

文件：533.24 Kbytes 页数：11 Pages

MA-COM

The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40 @ 6 W • Characterized with series equiva

文件：176.58 Kbytes 页数：6 Pages

MA-COM

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

文件：82.83 Kbytes 页数：6 Pages

Motorola

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