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首页 >MRF>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MRF1511NT1_06	文件：463.71 Kbytes Page：13 Pages	RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl 文件：463.71 Kbytes 页数：13 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1511NT1_08	文件：471.04 Kbytes Page：14 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件：471.04 Kbytes 页数：14 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1511T1	文件：229.05 Kbytes Page：12 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 文件：229.05 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1511T1	文件：472.35 Kbytes Page：12 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 文件：472.35 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1513NT1	文件：479.56 Kbytes Page：16 Pages	RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件：479.56 Kbytes 页数：16 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1513T1	文件：479.56 Kbytes Page：16 Pages	RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件：479.56 Kbytes 页数：16 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1517NT1	文件：277.99 Kbytes Page：15 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件：277.99 Kbytes 页数：15 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1517T1	文件：288.84 Kbytes Page：16 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli 文件：288.84 Kbytes 页数：16 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF1517T1	文件：345.48 Kbytes Page：16 Pages	The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common 文件：345.48 Kbytes 页数：16 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF1518NT1	文件：757.51 Kbytes Page：20 Pages	RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件：757.51 Kbytes 页数：20 Pages	MOTOROLA 摩托罗拉	MOTOROLA

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晶体管资料

型号：
MRF207
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
甚高频（VHF）_TR
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
0.4A
最大工作频率：
220MHZ
引脚数：
3
可代换的型号：
BFR36,BLW11,3DA21A,
最大耗散功率：
1W
放大倍数：
图片代号：
C-40
vtest：
36
htest：
220000000
atest：
0.4
wtest：
1

产品属性

产品编号：
MRF
制造商：
L3 Narda-MITEQ
类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
包装：
盒
描述：
L3 PRODUCT

供应商	型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	MRF421	MINI	24+	SMD	3600	MINI专营品牌全新原装正品假一赔十	询价
深圳市科雨电子有限公司	MRF5812R2	MICROSEMI	25+	SOP-8	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市百诺芯科技有限公司	MRF222	MOTOROLA/摩托罗拉	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市弘为电子有限公司	MRF275L	MOT	24+	原厂封装	120	原装现货假一罚十	询价
深圳市欧亚佳电子有限公司	MRF39RAT-I/LY	Microchip	20+	24-VQFN	3000	无线通信IC,大量现货!	询价
深圳市一线半导体有限公司	MRF511		24+	CAN	500		询价
深圳市恒创达实业有限公司	MRF19030L	FREESCALE	17+	SMD	6200	100%原装正品现货	询价
深圳市粤骏腾电子科技有限公司	MRF24WN0MA-I/RM100	MICROCHIP/微芯	24+	NA	32	原装现货,专业配单专家	询价
深圳市华斯顿科技有限公司	MRF8S18120HSR3	FREESCAL	25+23+	NI-780	23481	绝对原装全新正品现货/优势渠道商、原盘原包原盒	询价
深圳市佳鑫美电子科技有限公司	MRF1C1854A	MOT	25+	SSOP	2700	全新原装自家现货优势!	询价

更多MRF供应商更新时间2026-3-27 16:34:00

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