RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.

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ASI

The RF MOSFET Line 15W, to 400MHz, 28V

The RF MOSFET Line 15W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficien

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：284.67 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field-Effect Transistors

The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：80.1 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain =

文件：340.21 Kbytes 页数：11 Pages

MACOM

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power =

文件：221.24 Kbytes 页数：9 Pages

MACOM

RF Power Field-Effect Transistors

The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：80.1 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF MOSFET Line 30W, to 400MHz, 28V

The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband

文件：412.47 Kbytes 页数：10 Pages

MA-COM

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.

文件：21.02 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60 (Typical) • Small– and large–signal characterization • Typical performance a

文件：437.55 Kbytes 页数：11 Pages

MA-COM