MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

文件：101.55 Kbytes 页数：5 Pages

MACOM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min • 100 Tested for Load Mismatch at All Phase A

文件：97.78 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

文件：128.12 Kbytes 页数：4 Pages

MACOM

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

文件：171.98 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

文件：98.04 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

文件：90.29 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025-1150MHz

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) • 100

文件：187.18 Kbytes 页数：6 Pages

MA-COM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

文件：139.97 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

文件：110.64 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

文件：110.64 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉