NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System

文件：16.37 Kbytes 页数：1 Pages

ASI

Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested

文件：170.22 Kbytes 页数：4 Pages

MA-COM

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Pha

文件：104.81 Kbytes 页数：4 Pages

MACOM

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

文件：68.96 Kbytes 页数：1 Pages

ASI

ELECTRICAL SPECIFICATIONS (Tease - 25째C)

ELECTRICAL SPECIFICATIONS (Tease - 25°C)

文件：82.65 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

文件：33.36 Kbytes 页数：1 Pages

ASI