MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTOR

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

文件：101.2 Kbytes 页数：4 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

文件：163.59 Kbytes 页数：4 Pages

MACOM

Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi

文件：195.44 Kbytes 页数：5 Pages

MA-COM

Microwave Long Pulse Power Transistor

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

文件：157.34 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

文件：101.55 Kbytes 页数：5 Pages

MACOM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

文件：19.74 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

文件：19.74 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

文件：16.55 Kbytes 页数：1 Pages

ASI

Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB • 100 Tested for load mismatch at all phase angles with 10:1 VSWR •

文件：170.24 Kbytes 页数：5 Pages

MA-COM