Designed for power amplifier applications in industrial

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

文件：84.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 15 dB Typ. at 30 W /175 MHz • ηD = 50 Typ. at 30 W /30 MHz • Omnigold™ Metalization System

文件：42.93 Kbytes 页数：1 Pages

ASI

Linear RF Power FET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

文件：285.74 Kbytes 页数：7 Pages

MA-COM

RF Power FET 150W, to 150MHz, 50V

Designed primarily for linear large-signal output stages up to 150 MHz • Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) • Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

文件：285.58 Kbytes 页数：9 Pages

MA-COM

SILICON RF POWER MOSFET

DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

文件：19.91 Kbytes 页数：1 Pages

ASI

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

文件：148.54 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (

文件：183.53 Kbytes 页数：8 Pages

MACOM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

文件：103.24 Kbytes 页数：4 Pages

Motorola

摩托罗拉

RF POWER BIPOLAR TRANSISTORS

The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

文件：164.33 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF POWER BIPOLAR TRANSISTORS

The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

文件：164.33 Kbytes 页数：8 Pages

Motorola

摩托罗拉