LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

文件：206.31 Kbytes 页数：12 Pages

Motorola

摩托罗拉

LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

文件：206.31 Kbytes 页数：12 Pages

Motorola

摩托罗拉

RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and classAB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Cha

文件：210.43 Kbytes 页数：8 Pages

Motorola

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

文件：184.47 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：471.04 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：472.27 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：472.27 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl

文件：463.71 Kbytes 页数：13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：471.04 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5

文件：229.05 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体