RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and classAB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Cha

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MOTOROLA

摩托罗拉

1.5 GHz, 90 W, 26 V RF Power Transistor

Overview The MRF15090 Silicon RF PowerTransistor is designed for 26 volts microwavelarge–signal, common emitter, class A andclass AB linear amplifier applications inindustrial and commercial FM/AM equipment operatingin the range 1400–1600 MHz.MRF15090 removed from active portfolio. Possible Replacem \n•Specified 26 Volts, 1490 MHz, Class AB Characteristics\n Output Power — 90 Watts (PEP)\n Gain — 7.5 dB Min @ 90 Watts (PEP)\n Collector Efficiency — 30% Min @ 90 Watts (PEP)\n Intermodulation Distortion —   –28 dBc Max @ 90 Watts (PEP)\n•Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, ;

恩XP

150A, 900V - 1000V Hyperfast Diodes

150A, 900V - 1000V Hyperfast Diodes RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR

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INTERSIL

150A, 700V - 1000V Ultrafast Diodes

Description RURU15070, RURU15080 and RURU15090 and RURU150100 are ultrafast diodes with soft recovery characteristics (tRR Features • Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . . .

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INTERSIL