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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18030BR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18030BSR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF1803BR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF1803BSR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18060A	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18060A	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18060ALR3	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18060ALSR3	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF18060ALSR3	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF18060AR3	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA

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晶体管资料

型号：
MRF207
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
甚高频（VHF）_TR
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
0.4A
最大工作频率：
220MHZ
引脚数：
3
可代换的型号：
BFR36,BLW11,3DA21A,
最大耗散功率：
1W
放大倍数：
图片代号：
C-40
vtest：
36
htest：
220000000
atest：
0.4
wtest：
1

产品属性

产品编号：
MRF
制造商：
L3 Narda-MITEQ
类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
包装：
盒
描述：
L3 PRODUCT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏和科技有限公司	MRFIC2101	FREESCALE	24+	SOP16	5000	全现原装公司现货	询价
千层芯半导体(深圳)有限公司	MRF421	MINI	24+	SMD	3600	MINI专营品牌全新原装正品假一赔十	询价
深圳市一线半导体有限公司	MRF511		24+	CAN	500		询价
深圳市欧亚佳电子有限公司	MRF39RAT-I/LY	Microchip	20+	24-VQFN	3000	无线通信IC,大量现货!	询价
深圳市恒创达实业有限公司	MRF19030L	FREESCALE	17+	SMD	6200	100%原装正品现货	询价
深圳市百诺芯科技有限公司	MRF222	MOTOROLA/摩托罗拉	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市科雨电子有限公司	MRF5812R2	MICROSEMI	25+	SOP-8	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	MRF5S9080NR1	FREESCALE	21+	高频管	1372	只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查	询价
深圳市澳亿芯电子科技有限公司	MRF151G		25+		50	普通	询价
深圳市振宏微科技有限公司	MRF9002	FREESCAL	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价

更多MRF供应商更新时间2026-3-27 10:20:00

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