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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18030BR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18030BSR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF1803BR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF1803BSR3	文件：275.29 Kbytes Page：8 Pages	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 文件：275.29 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060A	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060A	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060ALR3	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALSR3	文件：393.1 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL 文件：393.1 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALSR3	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060AR3	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola

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晶体管资料

型号：
MRF207
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
甚高频（VHF）_TR
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
0.4A
最大工作频率：
220MHZ
引脚数：
3
可代换的型号：
BFR36,BLW11,3DA21A,
最大耗散功率：
1W
放大倍数：
图片代号：
C-40
vtest：
36
htest：
220000000
atest：
0.4
wtest：
1

产品属性

产品编号：
MRF
制造商：
L3 Narda-MITEQ
类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
包装：
盒
描述：
L3 PRODUCT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	MRFIC1859R2	MOT	25+	N/A	2232	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市凌旭科技有限公司	MRFIC0916T1	MOTOROLA	2016+	SOT143	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市豪迈兴电子有限公司	MRF6S18100N	FREESCALE	24+	N/A	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市澳亿芯电子科技有限公司	MRF151G		07+		50	普通	询价
深圳市一线半导体有限公司	MRF511		24+	CAN	500		询价
深圳市芯连胜科技有限公司	MRF151G	M/A-COM	20+	TO-62	168	原装正品现货	询价
深圳市欧亚佳电子有限公司	MRF39RAT-I/LY	Microchip	20+	24-VQFN	3000	无线通信IC,大量现货!	询价
千层芯半导体(深圳)有限公司	MRF8S7120NR3	FREESCALE	24+	SMD	1680	FREESCALE专营品牌进口原装现货假一赔十	询价
深圳市纳立科技有限公司	MRF8S21100HSR3		三年内		1983	只做原装正品	询价
深圳市喜鹊微科技有限公司	MRFE6S9200HR3	恩XP	20+	NI-880	26500	只做全新原装,优势渠道	询价

更多MRF供应商更新时间2025-12-25 8:21:00

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