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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18085ALR3	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALSR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085ALSR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085ALSR3	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085AR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085AR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085B	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	Motorola 摩托罗拉	Motorola
MRF18085B	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLR3	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLSR3	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

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晶体管资料

型号：
MRF207
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
甚高频（VHF）_TR
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
0.4A
最大工作频率：
220MHZ
引脚数：
3
可代换的型号：
BFR36,BLW11,3DA21A,
最大耗散功率：
1W
放大倍数：
图片代号：
C-40
vtest：
36
htest：
220000000
atest：
0.4
wtest：
1

产品属性

产品编号：
MRF
制造商：
L3 Narda-MITEQ
类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
包装：
盒
描述：
L3 PRODUCT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市奥诗达电子有限公司	MRF428	MACOM	2024+	CASE211	233842	原装正品,价格优惠	询价
深圳市海天鸿电子科技有限公司	MRF1513NT1	恩XP	1708+	?	11520	只做原装进口,假一罚十	询价
深圳市恒创达实业有限公司	MRF19030L	FREESCALE	17+	SMD	6200	100%原装正品现货	询价
深圳市粤科源兴科技有限公司	MRF24WB0MB/RM	Microchip	13+		2073	原装分销	询价
深圳市一线半导体有限公司	MRF175GU		24+		1100	真实现货库存	询价
深圳市科雨电子有限公司	MRF942	MOTOROLA/摩托罗拉	25+		10	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	MRF7S19100NR1	FREESCALE	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市湘达电子科技有限公司	MRF6V2010NR1高频器件	恩XP	2022+		5000	只做原装,价格优惠,长期供货。	询价
深圳市赛芯源科技有限公司	MRF6V12250HR	MITSUBISHI/三菱	2005+	高频管	182	原装正品,诚信经营。	询价
深圳市纳立科技有限公司	MRF8S21100HSR3		三年内		1983	只做原装正品	询价

更多MRF供应商更新时间2025-12-24 9:07:00

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