MRF规格书供应价格优曲克bel第23页-114ic电子网

首页 >MRF>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18060ASR3	文件：405.18 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB 文件：405.18 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060B	文件：490.03 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency 文件：490.03 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060B	文件：332.4 Kbytes Page：12 Pages	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre 文件：332.4 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060BLR3	文件：332.4 Kbytes Page：12 Pages	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre 文件：332.4 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060BLSR3	文件：332.4 Kbytes Page：12 Pages	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre 文件：332.4 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060BLSR3	文件：490.03 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency 文件：490.03 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060BR3	文件：490.03 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency 文件：490.03 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18060BSR3	文件：490.03 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency 文件：490.03 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085A	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085A	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

<<<18 19 20 21 222324 25 26 27 28 >>>

晶体管资料

型号：
MRF207
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
甚高频（VHF）_TR
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
0.4A
最大工作频率：
220MHZ
引脚数：
3
可代换的型号：
BFR36,BLW11,3DA21A,
最大耗散功率：
1W
放大倍数：
图片代号：
C-40
vtest：
36
htest：
220000000
atest：
0.4
wtest：
1

产品属性

产品编号：
MRF
制造商：
L3 Narda-MITEQ
类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
包装：
盒
描述：
L3 PRODUCT

供应商	型号	品牌	批号	封装	库存	备注	价格
上海市鑫鸿达电子	MRFIC0915T1	MPN	2022+		3000	全新原装货期两周	询价
深圳市科雨电子有限公司	MRFIC1818R2	MOTOROLA/摩托罗拉	25+	SSOP16	950	就找我吧!--邀您体验愉快问购元件!	询价
深圳市一线半导体有限公司	MRF511		24+	CAN	500		询价
芯灿微（深圳）科技有限公司	MRF24J40-I/ML	MICROCHIP/美国微芯	21+	QFN-40(6x6)	10000	全新原装现货	询价
深圳市河锋鑫科技有限公司	MRFG35030R5	恩XP	22+		9000	原厂渠道,现货配单	询价
深圳市海天鸿电子科技有限公司	MRF1513NT1	恩XP	1708+	?	11520	只做原装进口,假一罚十	询价
深圳市恒创达实业有限公司	MRF19030L	FREESCALE	17+	SMD	6200	100%原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	MRF134	MA/COM	23+	高频管	1000	原装正品,假一罚十	询价
深圳市创盛芯科技有限公司	MRF24J40-I/ML	MICROCHIP/微芯	25+	QFN40	51637	全新原装正品支持含税	询价
深圳市卓越微芯电子有限公司	MRFIC1859R2	MOT	25+	N/A	2232	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多MRF供应商更新时间2025-12-25 9:50:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号