The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

文件：447.7 Kbytes 页数：16 Pages

MA-COM

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

文件：38.37 Kbytes 页数：1 Pages

ASI

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

文件：22.41 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

文件：447.7 Kbytes 页数：16 Pages

MA-COM

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

文件：214.11 Kbytes 页数：11 Pages

MACOM

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：110.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

文件：138.89 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

文件：138.89 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉