MRF175GU分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

The RF MOSFET Line

RF Power

​​​​​​​Field-Effect Transistors

N–Channel Enhancement–Mode

Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance

MRF175GV @ 28 V, 225 MHz (“V” Suffix)

Output Power — 200 Watts

Power Gain — 14 dB Typ

Efficiency — 65 Typ

MRF175GU @ 28 V, 400 MHz (“U” Suffix)

Output Power — 150 Watts

Power Gain — 12 dB Typ

Efficiency — 55 Typ

• 100 Ruggedness Tested At Rated Output Power

• Low Thermal Resistance

• Low Crss — 20 pF Typ @ VDS = 28