Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V

The MMRF1013HR5 and MMRF1013HSR5 are RF Power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 32 VDD Operation\n• Integrated ESD Protection\n• Designed for Push-Pull Operation\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operatio;

恩XP

RF Power LDMOS Transistors

文件：896.99 Kbytes 页数：16 Pages

恩XP

Hall-effect position sensor with convenient snap-fit mounting

文件：250.45 Kbytes 页数：2 Pages

ZFSWITCHES

采埃孚

2W, Wide Input Range SMD, Single & Dual Output DC/DC Converters

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MINMAX

捷拓科技

Qualified for lead-free reflow solder process according IPC/JEDEC J-STD-020D

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TOTAL-POWER

Total Power International