Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Low voltage PNP power transistor

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

文件：173.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage PNP power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power packa

文件：214.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Silicon PNP epitaxial planer Transistors

Features • Designed for General Purpose Amplifier and Low Speed Switching Applications • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp

文件：590.29 Kbytes 页数：4 Pages

MCC

100V PNP HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A High Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp

文件：384.05 Kbytes 页数：7 Pages

DIODES

美台半导体

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.61 Kbytes 页数：7 Pages

DIODES

美台半导体

isc Silicon PNP Power Transistors

文件：361.21 Kbytes 页数：3 Pages

ISC

无锡固电

100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes 页数：7 Pages

DIODES

美台半导体

Complementary Power Transistors

文件：81.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体