Complementary Power Transistors

文件：135.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：100.84 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：135.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：81.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：135.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：81.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：100.84 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

General Purpose Amplifier Low Speed Switching Applications

文件：54.75 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

3.0 A，100 V，PNP 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Lead Formed Version in 16 mm Tape and Reel (\"T4G\" Suffix)\n• Electrically Similar to Popular TIP31 and TIP32 Series\n• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen;

ONSEMI

安森美半导体

Low voltage PNP power transistor

The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Surface-mounting TO-252 power package in tape and reel\nComplementary to the NPN type MJD31C;

ST

意法半导体