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MJD32C

isc Silicon PNP Power Transistors

DESCRIPTION •DCCurrentGain-hFE=25(Min)@IC=-1A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •ComplementtoTypeMJD31C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD32C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

MJD32C

PNP Epitaxial Silicon Transistor

DESCRIPTION •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffix) •Electrica

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MJD32C

Marking:MJD32C;Package:DPAK;100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD32C

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.2V(Max)@IC=-3A ·ComplementtoTypeMJD31C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD32C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD32C

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP32andTIP32C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD32C

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD32C

isc Silicon PNP Power Transistors

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD32C

100V PNP HIGH VOLTAGE TRANSISTOR

DIODESDiodes Incorporated

美台半导体

产品属性

  • 产品编号:

    MJD32C

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.2V @ 375mA,3A

  • 电流 - 集电极截止(最大值):

    50µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    10 @ 3A,4V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS PNP 100V 3A DPAK

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025
TO-252
3200
国产南科
询价
CJ/长电
25+
TO-252
32000
CJ/长电全新特价MJD32C即刻询购立享优惠#长期有货
询价
ON
24+
TO-252
8700
绝对原装现货,价格低,欢迎询购!
询价
CJ
23+
TO252
12500
原厂原装正品
询价
长晶
24+
252-251
499794
免费送样原盒原包现货一手渠道联系
询价
CJ/长晶
24+
TO-252
45000
只做全新原装进口现货
询价
ON/ONSemiconductor/安森
24+
TO-263
7434
新进库存/原装
询价
MOT
99+
SOT252/2.5
4300
全新原装进口自己库存优势
询价
MOT
05+
原厂原装
351
只做全新原装真实现货供应
询价
ST
23+
TO-252
5000
原装正品,假一罚十
询价
更多MJD32C供应商 更新时间2025-7-13 14:00:00