Polar HiPerFET Power MOSFET

Polar™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • H

文件：184.07 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

High Current MegaMOSTMFET

Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to mount with one screw (isolated mounting screw hole)

文件：85.71 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：296.12 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHTTM Power MOSFET N-Channel Enhancement Mode

Features ● International standard package ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

文件：168.84 Kbytes 页数：5 Pages

IXYS

艾赛斯