N通道沟槽栅 Gen2 MOSFET

• 高电流性能（高达600A）\n• 较低的RDS(ON) 和栅极电荷(Qg)\n• Incorporates Littelfuse HiPerFETTM technology for fast power switching 性能\n• 雪崩功能;

Littelfuse

力特

GigaMOS TrenchT2 HiperFET Power MOSFET

文件：186.58 Kbytes 页数：6 Pages

IXYS

艾赛斯

GigaMOS TrenchT2 HiperFET Power MOSFET

文件：186.58 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 240A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.2mΩ（max）@VGS= 10V APPLICATIONS ·Battery Chargers ·DC-DC Converters ·DC Choppers ·AC Motor Drives

文件：321.14 Kbytes 页数：2 Pages

ISC

无锡固电

GigaMOS TrenchT2 HiperFET Power MOSFET

GigaMOS™ TrenchT2 HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Isolation voltage 2500 V~ • High Current Handling Capability • Fast Intrinsic Diode • Avalanch

文件：178.88 Kbytes 页数：6 Pages

IXYS

艾赛斯