IXTK180N15

High Current MegaMOSTMFET

Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easytomountwithonescrew (isolatedmountingscrewhole)

IXTK180N15

isc N-Channel MOSFET Transistor

IXTK180N15P

PolarHTTM Power MOSFET N-Channel Enhancement Mode

Features ●Internationalstandardpackage ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXTK180N15P

N-Channel Enhancement Mode Power MOSFET

IXTK180N15P_V01

N-Channel Enhancement Mode Power MOSFET

IXFK180N15P

PolarHiPerFETPowerMOSFET

Polar™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •H

IXFN180N15P

PolarHTHiPerFETPowerMOSFET

PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti

IXFN180N15P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V APPLICATIONS ·Switching

IXFR180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFR180N15P

PolarHVHiPerFETPowerMOSFETISOPLUS247

PolarHV™HiPerFETPowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardisolatedpackage •ULrecognizedpackage •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipa