High Current MegaMOSTMFET

Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to mount with one screw (isolated mounting screw hole)

文件：85.71 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：296.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

PolarHTTM Power MOSFET N-Channel Enhancement Mode

Features ● International standard package ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

文件：168.84 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Power MOSFET

文件：130.63 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Power MOSFET

文件：130.63 Kbytes 页数：6 Pages

IXYS

艾赛斯