HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and curr

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HiPerFET™ Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg • Low gate charge\n• Epoxy meet UL 94 V-0, flammability classification\n• Rugged polysilicon gate cell structure\n• Fast intrinsic RectifierAdvantages\n• Space savings\n• High power density;

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Preliminary Technical Information

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features ● Fast Recovery diode ● Unclamped Inductive Switching (UIS) rated ● International standard packages ● Low package inductance - easy to drive and to protect

文件：330.12 Kbytes 页数：5 Pages

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features ● Fast Recovery diode ● Unclamped Inductive Switching (UIS) rated ● International standard packages ● Low package inductance - easy to drive and to protect

文件：330.12 Kbytes 页数：5 Pages

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艾赛斯