PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features ● Fast Recovery diode ● Unclamped Inductive Switching (UIS) rated ● International standard packages ● Low package inductance - easy to drive and to protect

文件：330.12 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C)

文件：64.75 Kbytes 页数：2 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C)

文件：64.75 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFASTTM IGBT

Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOS™ process • MOS Gate turn-on - drive simplicity

文件：53.49 Kbytes 页数：2 Pages

IXYS

艾赛斯