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型号	下载订购	功能描述	制造商上传企业	LOGO
MGW30N60	文件：214.5 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re 文件：214.5 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MGW30N60	文件：300 bytes Page：1 Pages	Insulated Gate Bipolar Transistor	恩XP	恩XP
MGY30N60D	文件：254.58 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block 文件：254.58 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
SGH30N60RUF	文件：565.84 Kbytes Page：7 Pages	Short Circuit Rated IGBT 文件：565.84 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
SGH30N60RUFD	文件：653.69 Kbytes Page：8 Pages	Short Circuit Rated IGBT 文件：653.69 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多MGW30N60供应商更新时间2026-10-10 13:30:00