MGY25N120D资料datasheet下载供应代理-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
MGY25N120D	文件：171.59 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor with Anti-Parallel Diode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MGY25N120D	文件：256.3 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor with Anti-Parallel Diode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock	MotorolaMotorola, Inc 摩托罗拉
25N120	文件：45.88 Kbytes Page：2 Pages	LowVCE(sat)HighspeedIGBT LowVCE(sat)HighspeedIGBT Features •InternationalstandardpackageJEDECTO-247AD •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DC	IXYS IXYS Integrated Circuits Division
BRG25N120D	文件：769.42 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
DTGN25N120	文件：1.50879 Mbytes Page：8 Pages	Extremelyenhancedavalanchecapability GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,high energyefficiencyandshortcircuitruggedness. Itisdesignedforapplicationssuchasmotorcontrol,uninterruptedpower supplies(UPS),generalinverters. FEATURES ·Highspeedswitching ·Highruggedness,	DINTEK DinTek Semiconductor Co,.Ltd
FGA25N120	文件：1.38861 Mbytes Page：9 Pages	1200V,25ANPTTrenchIGBT	ONSEMION Semiconductor 安森美半导体安森美半导体公司
FGA25N120AN	文件：377.85 Kbytes Page：4 Pages	IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.5V@IC=25A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FGA25N120AN	文件：460.31 Kbytes Page：7 Pages	IGBT GeneralDescription EmployingNPTtechnology,Fairchild’sANseriesofIGBTsprovideslowconductionandswitchinglosses.TheAN seriesoffersansolutionforapplicationsuchasinductionheating(IH),motorcontrol,generalpurposeinvertersanduninterruptiblepowersupplies(UPS).	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA25N120AN	文件：926.86 Kbytes Page：6 Pages	Highspeedswitching	KERSEMI Kersemi Electronic Co., Ltd.
FGA25N120AND	文件：567.05 Kbytes Page：8 Pages	IGBT GeneralDescription EmployingNPTtechnology,Fairchild’sANDseriesofIGBTsprovideslowconductionandswitchinglosses.TheANDseriesoffersansolutionforapplicationsuchasinductionheating(IH),motorcontrol,generalpurposeinvertersanduninterruptiblepowersupplies(UPS). Feature	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA25N120ANTD	文件：867.85 Kbytes Page：9 Pages	1200VNPTTrenchIGBT Description UsingFairchild®sproprietarytrenchdesignandadvancedNPTtechnology,the1200VNPTIGBTofferssuperiorconductionandswitchingperformances,highavalancheruggednessandeasyparalleloperation.Thisdeviceiswellsuitedfortheresonantorsoftswitchingapplicationsuchasi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA25N120ANTD	文件：658.77 Kbytes Page：9 Pages	1200VNPTTrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA25N120ANTD	文件：385.96 Kbytes Page：4 Pages	NPTTrenchIGBT DESCRIPTION ·NPTTrenchTechnology,Positivetemperaturecoefficien ·Extremelyenhancedavalanchecapabilityt ·LowSaturationVoltage:VCE(sat)=2.0V(Typ.)@IC=25A APPLICATIONS ·SolarInverter,UPS,Welder,DigitalPowerGenerator ·Telecom,ESS	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FGA25N120ANTDTU	文件：1.38861 Mbytes Page：9 Pages	1200V,25ANPTTrenchIGBT	ONSEMION Semiconductor 安森美半导体安森美半导体公司
FGA25N120ANTDTU	文件：786.01 Kbytes Page：9 Pages	1200V,25ANPTTrenchIGBT Description UsingFairchild®sproprietarytrenchdesignandadvancedNPTtechnology,the1200VNPTIGBTofferssuperiorconductionandswitchingperformances,highavalancheruggednessandeasyparalleloperation.Thisdeviceiswellsuitedfortheresonantorsoftswitchingapplicationsuchasi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA25N120FTD	文件：815.52 Kbytes Page：9 Pages	1200V,25AFieldStopTrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGH25N120FTDS	文件：711.13 Kbytes Page：9 Pages	1200V,25AFieldStopTrenchIGBT GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffertheoptimumperformanceforhardswitchingapplicationsuchassolarinverter,UPS,welderandPFCapplications. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)=1.60V@	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGW25N120VD	文件：679.74 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)1200V/25A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications InverterforMotordrive ACandDCServodriveamplifer Uninterruptiblepowersupply	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
HGH25N120A	文件：996.65 Kbytes Page：6 Pages	N-ChannelEnhancementInsulatedGateBipolarTransistor	HuashanHuashan Electronic Devices Co 华汕电子器件
HIH25N120TN	文件：870.21 Kbytes Page：8 Pages	1200VNPTTrenchIGBT	SEMIHOW SemiHow Co.,Ltd.

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详细参数

型号：
MGY25N120D
制造商：
Rochester Electronics LLC
功能描述：
- Bulk
制造商：
ON Semiconductor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	MGY25N120D			N/A	1700		询价
深圳庞田科技有限公司	MGY25N120D	ON/安森美	2023+	TO-3P	20000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市惊羽科技有限公司	MGY30N60D	ON-安森美	24+25+/26+27+	车规-晶体管	6328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市欧立现代科技有限公司	MGY40N60	mot	22+	N/A	6980	原装现货,可开13%税票	询价
深圳兆威电子有限公司	MGY40N60	ON/安森美	23+	TO-264	90000	只做原装全系列供应价格优势可开增票	询价
利广微科技（深圳)有限公司	MGY40N60	ON/安森美		标准封装	57598	一级代理原装正品现货期货均可订购	询价
深圳市正纳电子有限公司	MGY40N60	ON/安森美	23+	NA	12095	电子元器件供应原装现货. 优质独立分销。原厂核心渠道	询价
深圳市英瑞芯科技有限公司	MGY40N60	ON	2022+	NA	8600	原装正品,欢迎来电咨询!	询价
深圳市美思瑞电子科技有限公司	MGY40N60	ON/安森美	22+	N/A	12095	现货,原厂原装假一罚十!	询价
深圳市博亿诚科技有限公司	MGY40N60	ON/安森美		NA	12095	普通	询价

更多MGY25N120D供应商更新时间2024-4-28 10:20:00

详细参数

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