IGBT，1200V，25A，场截止沟槽

飞兆半导体的 1200V 沟道 IGBT 系列采用先进的场截止沟道 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等硬开关应用提供最佳性能。 •高速开关\n•低饱和电压：VCE(sat) = 1.60V @ IC = 25A\n•高输入阻抗\n•符合 RoHS 标准;

ONSEMI

安森美半导体

1200V, 25A Field Stop Trench IGBT

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC appli cations. Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.60 V @

文件：711.13 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 50A 313W TO247

ONSEMI

安森美半导体

Discrete IGBT (High-Speed V series) 1200V / 25A

Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifer Uninterruptible power supply

文件：679.74 Kbytes 页数：8 Pages

FUJI

富士通

1200V/25A NPT IGBT

Features 1200V,25A VCE(sat)(typ.)=2.2V@VGE=15V,IC=25A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General DescriptionLGE NPT IGBTs offer lower losses and higher energyefficiency for application such as IH (induction heati

文件：1.24241 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Insulated Gate Bipolar Transistor

文件：996.65 Kbytes 页数：6 Pages

HUASHAN

华汕电子器件