PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：171.16 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：294.99 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET

Polar Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Features • Plastic Overmolded Tab for Electrical Isolation • International Standard Package • Low RDS(on) and QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • H

文件：121.3 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：301.98 Kbytes 页数：2 Pages

ISC

无锡固电