Polar Power MOSFET

Polar Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Features • Plastic Overmolded Tab for Electrical Isolation • International Standard Package • Low RDS(on) and QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • H

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：294.99 Kbytes 页数：2 Pages

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无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：301.98 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：176.7 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：295.05 Kbytes 页数：2 Pages

ISC

无锡固电