PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：326.23 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types\n;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.16 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

文件：114.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

MegaMOS FET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • M

文件：59.23 Kbytes 页数：2 Pages

IXYS

艾赛斯