PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

文件：232.16 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 800V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.7Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot va

文件：372.33 Kbytes 页数：2 Pages

ISC

无锡固电

MegaMOSFET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard package • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：80.97 Kbytes 页数：4 Pages

IXYS

艾赛斯