IXTH14N80中文资料IXYS数据手册PDF规格书
IXTH14N80规格书详情
MegaMOS™ FET
N-Channel Enhancement Mode
特性 Features
• International standard package
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast switching times
Applications
• Switch-mode and resonant-mode power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
产品属性
- 型号:
IXTH14N80
- 功能描述:
MOSFET 14 Amps 800V 0.7 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
IXYS |
23+ |
TO247 |
8000 |
只做原装现货 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS/艾赛斯 |
24+ |
TO247 |
37935 |
郑重承诺只做原装进口现货 |
询价 | ||
IXYS |
24+ |
TO-247 |
5000 |
只做原装公司现货 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS/艾赛斯 |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
IXYS/艾赛斯 |
21+ |
TO-247 |
10000 |
原装现货假一罚十 |
询价 | ||
IXYS |
24+ |
SOT-5414&NBS |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 |