isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 30V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.0V(Max) @IC=8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

Teccor짰 brand Thyristors Standard Bidirectional SIDACs

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

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Littelfuse

力特

SIDACs feature glass-passivated junctions to ensure a rugged and dependable

文件：382.45 Kbytes 页数：12 Pages

Littelfuse

力特

Teccor짰 brand Thyristors Standard Bidirectional SIDACs

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

文件：431.95 Kbytes 页数：12 Pages

Littelfuse

力特