isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC=1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：283.94 Kbytes 页数：2 Pages

ISC

无锡固电

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.77 Kbytes 页数：2 Pages

EIC

5 BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS LDO CONTROLLER AND 200mA LDO ON BOARD

DESCRIPTION The US3018 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The US3018 provides a single chip controller IC for the Vcore , LDO controller for GTL+ and an internal 200

文件：108.26 Kbytes 页数：17 Pages

UNISEM

5 BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS LDO CONTROLLER AND 200mA LDO ON BOARD

DESCRIPTION The US3018 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The US3018 provides a single chip controller IC for the Vcore , LDO controller for GTL+ and an internal 200

文件：108.26 Kbytes 页数：17 Pages

UNISEM