Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max)@ IC=3A APPLICATIONS · Designed for low frequency power amplifiers and low speed switching applications

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ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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TOSHIBA

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30 AMP AVALANCHE BRIDGES

30 AMP AVALANCHE BRIDGES ● 2000V isolation - Terminals to Base ● Low Forward Voltage Drip ● Copper Mounting Pad for Low Thermal Resistance ● 30 A DC at 80°C Case Temp. ● Glass Passivated Die

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MICROSEMI

美高森美

SILICON BRIDGE RECTIFIERS

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EIC