Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.4V(Max) @IC=8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

Phototransistor Detector NPN-Si, Visible & IR

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE

SDH/SONET STM1/OC3 laser drivers

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PHI

PHI

SDH/SONET STM1/OC3 laser drivers

文件：523.52 Kbytes 页数：22 Pages

PHI

PHI