ISB3032

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-80V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-0.4V(Max)@IC=-8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

3032

90CROSSOVERHYBRIDCOUPLER800-900,890-960,OR1700-1900MHZ

Description M/A-COMs3032Seriesof90°CrossoverHybridCouplersprovidelowloss,highisolationanswerstoyourcouplingneeds. Features •TypeNjack •LowLoss •HighIsolation

3032

281.25MHzBandpassFilter

GeneralDescription KRElectronicspartnumber3032isa281.25MHzbandpassfilter.Thefilterhasaminimum3dBbandwidthof34MHz.Otherbandwidthsandcenterfrequenciesareavailable.Pleaseconsultthefactory. Features ●281.25MHzBandpassFilter ●34MHzmin3dBBandwidth ●Sharp

3032A

Inst,8Tri#18StrBC,PVCInsE1,OS,BlkPVCJkt,300VPLTCITCCMG

ProductDescription ULInstrumentation,8Triad18AWG(7x26+7x30)BareCopper,PVCInsulationE1ColorCode,OverallBeldfoil®Shield,BlackPVCOuterJacket,PLTCITC

3032-SMD

281.25MHzBandpassFilter

AN3032

Thisapplicationnotedescribesademonstrationboardabletodrive

AP3032

WHITELEDSTEP-UPCONVERTER

AP3032

WHITELEDSTEP-UPCONVERTER

Features •EfficiencyUpto81（VIN=5V,IOUT=80mA） •Drivesupto4RowsofWLEDswith7Series forEachinParallel(VIN=5V) •Fast1MHzSwitchingFrequency •WideInputVoltageRange:2.7Vto9V •LowFeedbackVoltage:200mV •OutputOverVoltageProtection •Cycle-by-cycleCurrentLimit

AV3032

single-chipsynthesizingCMOSVLSI

GENERALDESCRIPTION: TheAV0332C,AV0632E,AV0932B,AV0932C,AV1232D,AV1832C,AV2432B,AV3032,AV4232,isasingle-chipsynthesizingCMOSVLSIthatcansynthesizevoiceupto3,6,9,12,18,24,30,42seconds,usingAPLUSqualifiedcodingalgorithm(LOGPCM).Customerspeechdatawillbeeditedandpr

BG3032B

Openfuseblocks

BG3032P

Openfuseblocks

BG3032S

Openfuseblocks

BR3032

INDUSTRIALSOLUTIONS

BR3032

Poly-carbonmonofluoride(BRSeries)andManganeseDioxide(CRSeries)

Poly-carbonmonofluoride(BRSeries)andManganeseDioxide(CRSeries) COINCELLTABCONFIGURATIONS BR&CRSeriesCoinCellTabConfigurations

BR3032

LITHIUM-CoinType

Features: Highvoltageof3volts-twicethatofconventionaldrybatteries Extremelysmallself-dischargeforlongserviceandshelflife Awideoperationaltemperaturerange Compactandlightweight;extremelyhighenergydensityperunitweight Verysafe(poly-carbonmonofluoridelithium)

BURNDY_YF3032UI

CuAlloyBareFerrule,SmoothFunnelEntry,3/0AWG,1.26L,Seamlessbbl,TinPlated,ForUseOnCuCond.

BX3032

RFAMPLIFIERMODEL

CD3032B

1WATTCAPABILITYWITHPROPERHEATSINKING

•1N3016BTHRU1N3045BAVAILABLEINJANHCPERMIL-PRF-19500/115 •1WATTCAPABILITYWITHPROPERHEATSINKING •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDLL3032B

1WATTZENERDIODES

•1N3016BUR-1thru1N3045BUR-1AVAILABLEINJAN,JANTXANDJANTXV PERMIL-PRF-19500/115 •1WATTZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CEM3032

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,18A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.