Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications.

文件：294.1 Kbytes 页数：2 Pages

ISC

无锡固电

LEADLESS GLASS ZENER DIODES

DESCRIPTION This surface mountable zener diode seriesis similar to the 1N3016 thru 1N3051 JEDEC registrationin the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass he

文件：99.91 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Optoisolator TRIAC Driver Output

Description: The NTE3048 consists of a gallium arsenide infrared emitting diode optically coupled to a silicon bilateral switch in an 6–Lead DIP type package. This device is designed for use in applications requiring isolated TRIAC triggering. Features: ● Output Driver Designed for 240VAC Line

文件：20.79 Kbytes 页数：2 Pages

NTE

INFRARED RECEIVER

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：382.17 Kbytes 页数：6 Pages

PHI

PHI