Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= -0.4V(Max) @IC=-8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：347.59 Kbytes 页数：2 Pages

ISC

无锡固电

Phototransistor Detector

Description: The NTE3034A is designed for industrial processing and control applications such as light modula tors, shaft or position encoders, and end tape detectors. The NTE3034A is designed to be used with the NTE3029A infrared emitter in optical slotted coupler/interrupter applications.

文件：19.86 Kbytes 页数：2 Pages

NTE

SDH/SONET STM1/OC3 postamplifier

文件：143.7 Kbytes 页数：28 Pages

PHI

PHI

SDH/SONET STM1/OC3 postamplifier

文件：143.7 Kbytes 页数：28 Pages

PHI

PHI