Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -350V ·Good Linearity of hFE ·Complement to Type ISB3046 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

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ISC

无锡固电

30 AMP AVALANCHE BRIDGES

30 AMP AVALANCHE BRIDGES ● 2000V isolation - Terminals to Base ● Low Forward Voltage Drip ● Copper Mounting Pad for Low Thermal Resistance ● 30 A DC at 80°C Case Temp. ● Glass Passivated Die

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MICROSEMI

美高森美

SILICON BRIDGE RECTIFIERS

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EIC

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

文件：108 Kbytes 页数：7 Pages

PANASONIC

松下