Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 1A APPLICATIONS ·DC-DC converters ·Power switching

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ISC

无锡固电

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes 页数：6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes 页数：6 Pages

NSC

国半

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

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MOTOROLA

摩托罗拉