Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 1A APPLICATIONS ·DC-DC converters ·Power switching

文件：277.33 Kbytes 页数：2 Pages

ISC

无锡固电

SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  Solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency. High Operating Junction Temperature. Guard ring for overvoltage protection，High r

文件：411.6 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  Solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency. High Operating Junction Temperature. Guard ring for overvoltage protection，High r

文件：411.6 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes 页数：6 Pages

NSC

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