Telecommunications

文件：78.15 Kbytes 页数：2 Pages

ISOCOM

英国安数光

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

文件：345.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体