Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC=0.5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

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ISC

无锡固电

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

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PANASONIC

松下

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (800 Volts Peak) The MOC3081, MOC3082 and MOC3083 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the function of Zero Voltage Crossing bilateral triac drivers. They a

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MOTOROLA

摩托罗拉

Optoisolator NPN Darlington Transistor Output

Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

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NTE