Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

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ISC

无锡固电

Optoisolator NPN Darlington Transistor Output

Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current. Features:

文件：29.95 Kbytes 页数：3 Pages

NTE

SDH/SONET STM1/OC3 and STM4/OC12 transceiver

文件：127.17 Kbytes 页数：28 Pages

PHI

PHI

SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers

文件：151.81 Kbytes 页数：28 Pages

PHI

PHI