Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·DC Current Gain- : hFE= 100 (Min)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

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ISC

无锡固电

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to e

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MOTOROLA

摩托罗拉

60/90/120 Voice Smart

General Description The MSU30x2 is a monolithic talking microcomputer that can memorize voice up to 60/90/120 seconds using MOSEL qualified coding method(MPCM). Its an integration of traditional 4-bit microcomputer and voice chip with minimal external components. LCD driver and miscellaneous inte

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MOSEL

茂矽电子

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

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NTE