Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.4V(Max) @IC=8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：347.23 Kbytes 页数：2 Pages

ISC

无锡固电

Photo Interrupter

文件：260.16 Kbytes 页数：3 Pages

KODENSHI

可天士

Very Low Dropout Linear Regulator

文件：3.61818 Mbytes 页数：24 Pages

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亚德诺

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

文件：108 Kbytes 页数：7 Pages

PANASONIC

松下