Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 3V(Max) @IC=11A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

30 AMP AVALANCHE BRIDGES

30 AMP AVALANCHE BRIDGES ● 2000V isolation - Terminals to Base ● Low Forward Voltage Drip ● Copper Mounting Pad for Low Thermal Resistance ● 30 A DC at 80°C Case Temp. ● Glass Passivated Die

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Microsemi

美高森美

SILICON BRIDGE RECTIFIERS

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EIC

Dual 100mA, Low Dropout, Low Noise, Micropower Regulator wih Independent Inputs

文件：308.93 Kbytes 页数：16 Pages

LINER

凌力尔特