Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 3V(Max) @IC=11A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：277.37 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

文件：108 Kbytes 页数：7 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

文件：108 Kbytes 页数：7 Pages

PANASONIC

松下

Infrared Emitting Diode High Speed for Remote Control

Description: The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: • Low Forward Voltage • High Radiant Power and Radiant Intensity • Suitable for DC and High Pulse Current Operation • High

文件：20.28 Kbytes 页数：2 Pages

NTE