isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.7V(Max) @IC=150mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODES

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

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STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTOR NPN SILICON

The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can

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MOTOROLA

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