isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=6A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

LEADLESS GLASS ZENER DIODES

DESCRIPTION This surface mountable zener diode seriesis similar to the 1N3016 thru 1N3051 JEDEC registrationin the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass he

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MICROSEMI

美高森美

THREE PHASE BRIDGE MOSFET POWER MODULE

DESCRIPTION: The MSK 3017 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated ceramic tab power SIP that allows for direct heat sinking, the MSK 3017 can be interfaced with a wide array of brushless motor drive ICs. The MSK 3017 uses M.S Kennedys pr

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MSK

Infrared Emitting Diode High Speed for Remote Control

Description: The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: • Low Forward Voltage • High Radiant Power and Radiant Intensity • Suitable for DC and High Pulse Current Operation • High

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NTE