Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.3V(Max) @IC= 1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：312.09 Kbytes 页数：3 Pages

ISC

无锡固电

256-STAGE LOW NOISE BBD

DESCRIPTION The MN3009 is a 256-stage BBD having a wide dynamic range and low distortion characteristics. The MN3009 provides a signal delay of up to 12.8msec and is particularly suitable as a device for generation of vibrato and/or chorus effects in electronic musical instruments.

文件：179.16 Kbytes 页数：4 Pages

PANASONIC

松下

NON-ZERO-CROSSING TRIACS

文件：420.43 Kbytes 页数：5 Pages

QT

Optically Coupled Triac Drivers

文件：97.95 Kbytes 页数：2 Pages

OPTEK